Summary of Qualifications
•Results-oriented and self-motivated physicist with 5+ years experience in semiconductor device fabrication and electrical characterization of graphene, III-V semiconductor and photovoltaic materials.
•Strong skills in design of experiments and data analysis.
•Solid background in device physics and statistical methods.
•Proven ability to initiate projects and coordinate collaborations on joint projects producing several high quality journal publications.
Specialties
•Device Fabrication:Chemical Vapor Deposition, E-Beam/Photo Lithography, Focused Ion Beam Patterning, Dry/Wet Etch, E-Beam/Thermal/Sputter Deposition, Wire Bonder, Critical Point Dryer.
•Analysis Techniques: AFM, EDS, XRD, SEM, Ellipsometry, Photocurrent, Profiler, Raman Spectroscopy.
•Electrical Testing: Current/Voltage Source, Current/Voltage Amplifiers, FFT Network Analyzer, Lock-in Amplifier, Oscilloscope, Probe Station, Semiconductor Analyzer.
•Software: AutoCAD, LabVIEW, Origin, MATLAB, LaTeX, Microsoft Office, Nanometer Pattern Generation System (NPGS), Raith ELPHY.
•Others: English/Chinese Bilingual, Excellent Communication Skills, Leadership in Group Activities.
Experience
•Low frequency noise study in graphene FETs (Field-Effect Transistors). 08/2009-present
-Performed design of experiments for fabricating high quality graphene FETs with e-beam lithography.
-Improved reliability and efficiency of computer aided electrical measurements with LabVIEW programming.
-Discovered dependence of low frequency current fluctuations on device mobility in graphene FETs.
-Invented a technique that used FIB/SEM dual beam system to make high precision contacts on nanostructures with accuracy of 100nm, more than 60% of improvement to traditional method.
-Trained a few junior students to fabricate high quality graphene devices.
•Transport properties of graphene in high magnetic field. 11/2007-present
-First person in the field who observed integer quantum Hall effect in tri-layer graphene.
-Discovered metal-insulator transition in graphene by measuring temperature dependent Id-Vg from 0.25 to 60 Kelvin in 18 Tesla superconducting magnet.
•Photocurrent (PC) spectroscopy study in graphene FETs. 06/2009-04/2010
-Initiated collaboration with magnetic field photocurrent expert to conduct the research.
-Fabricated extremely large area graphene FETs ~15×20µm^2 which are suitable for PC measurements.
-Analyzed temperature dependent PC data in graphene to study local electric field across device.
-Successfully visualized charge transport through Landau levels with PC in 9 Tesla magnetic field.
•Optoelectronic transport in (GaN)1-x(ZnO)x solid solution nanowires. 11/2009-07/2010
-Designed and fabricated (GaN)1-x(ZnO)x solid solution nanowire FETs for the first time in the field.
-Measured device threshold voltage and mobility with semiconductor analyzer and probe station.
-Found bandgap of (GaN)1-x(ZnO)x solid solution nanowire 0.7 eV lower than that of GaN which leads to possible more efficient photovoltaic material than GaN and ZnO.
•Hydrostatic pressure study of AlGaN/GaN High Electron Mobility Transistors. 06/2006-10/2007
-Coordinated with TriQuint Semiconductor Inc. engineer to design suitable devices.
-Managed to increase 10% device output power by increasing hydrostatic pressure of device to 10kbar.
Education
Ph.D. in Physics,Stony Brook University, Stony Brook,NY Expected Dec. 2010
M.A. in Physics, Stony Brook University, Stony Brook, NY May 2006
B.S. in Physics, University of Science and Technology of China, Hefei, China June 2004
Awards and Honors
Di Tian Prize, Stony Brook University, Stony Brook, NY May 2007
Outstanding Student Scholarship, University of Science and Technology of China, Hefei, China 2001-2004
Out...
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