PROFESSIONAL SUMMARY
* 8+ years experience with semiconductor processing, micro/nanofabrication, and device engineering (photolithography, electron beam lithography (EBL), photo mask design and layout, reactive-ion etching (RIE), wet etching, chemical vapor deposition (CVD), chemical mechanical polishing (CMP), ion milling, metallization, lift-off, electroplating, rapid thermal annealing (RTA), etc.).
* 8+ years experience with design, creation and characterization of micro/nanoelectronics devices (e.g., SET, QD, MIM-FETT, MIM-TD, graphene FET, MTJ memories, SAW sensors).
* 3+ years experience with III-V compound semiconductors (GaAs/AlGaAs, InP/AlGaInAs/GaInAsP).
* 1 year experience with optoelectronics and silicon photonics (III-V semiconductor lasers, modulators, and hybrid devices on Si chips).
* 10+ years experience with fabrication and characterization of 2D films and multilayers, and 1D nanowires and nanotubes.
Fabrication includes magnetron sputtering, ion beam sputtering, chemical vapor deposition (CVD), thermal and e-beam evaporation, electroplating, RTA, etc.
Characterization includes scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), electrical and optical measurements, profilometer, ellipsometer, etc.
* 4+ years experience with mechanical design, machining, and management.
* 3+ years experience with cryogenic equipments, and ultra-low signal measurement techniques.
* Extensive working experience in multicultural and team environments.
GRANTS, AWARDS AND HONORS
* “Hexaboride-Based Nanostructures for Heterostructure Quantum Devices in Post-Si Electronics” (Project 2011-OJ-2127.001), Co-PI, Semiconductor Research Corporation (SRC), 06/2011–05/2012.
* “Fabrication and Application of One-Dimensional Boron-Based Nanostructures” (Project 10374078), PI, National Natural Science Foundation of China (NSFC), 01/2004–12/2006.
* Best Paper Award for Young Scientists, Chinese Materials Research Society, 2000
* Second Prize for the Great Contribution to the Progress of Science and Technology, Ministry of Education of China, 1999
EDUCATION
Ph. D., Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 2001
Thesis: New One-Dimensional Nanostructures, Nanojunctions, Controlled Arrays, and Their Phase Evolution under High Pressure
M. S., Materials Physics, Yanshan University, P. R. China, 1998
Thesis: Microstructure and Interdiffusion of Ag/Si, Fe/Mo, and NiFe/Mo Multilayers
B. S., Materials Science, Luoyang Institute of Technology, P. R. China, 1991
EXPERIENCE
Skorpios Technologies, Inc., Albuquerque, NM
Process Development Engineer
02/2013-01/2014
* Developing and prototyping III-V semiconductor broad area (BA) lasers, ridge waveguide (RWG) lasers, modulators, and their hybrid integration onto Si chips using CMOS-compatible processes.
Department of Electrical and Computer Engineering (ECE), Carnegie Mellon University
Project Scientist/Research Associate
02/2012-02/2013 and 12/2008-06/2010
* Fabrication of Transmitter Boards for Efficient Linearized All-Silicon Transmitter ICs (ELASTx).
@ Optimized the processing of combiners, transmission lines, connections, and board fabrication for ultra-high frequency (millimeter wave) CMOS power amplifiers (PA).
* Graphene Nanoelectronics and Devices, Magnetic Tunnel Junction (MTJ) Devices, and Surface Acoustic Wave (SAW) Devices.
@ Fabricated epitaxial graphene field effect transistors on SiC wafers.
@ Patterned MTJ nanopillars with promising spin torque transfer switching behaviors.
@ Prepared SAW devices for temperature and chemical sensing.
ECE Department and PINSE, University of Pittsburgh
Research Associate
12/2010-01/2012
* Co-PI of SRC project “Hexaboride-Based Nanostructures for Heterostructure Quantum Devices in Post-Si Electronics”. This is the first U. Pitt proposal that had been selected for funding by SRC.
ECE Department, University of Colorado at Boulder, and Phiar Corporation
Research Associate
03/2007-02/2008
* Exploring Metal-Insulator Quantum Tunnel Devices (Diode, Transistor, etc.).
@ Fabricated metal/insulator/metal tunnel diodes (MIM-TD) showing asymmetrical and very nonlinear (sharp turn-on) I-V characteristics.
@ Realized MIM and MIIM field effect tunnel transistors (FETT) with high ON/OFF ratio.
Department of Physics, Duke University
Research Associate
11/2003-09/2006
* Metal and Semiconductor Single Electron Devices (SETs) and Their Applications in Quantum Information Processing.
@ Fabricated series/parallel-coupled double quantum dot (DQD) with integrated Al-SETs on GaAs/AlGaAs two dimensional electron gas (2DEG).
@ Realized clear single electron tunneling detection in QDs using Al-SETs.
Beijing Laboratory of Electron Microscopy and Institute of Physics, Beijing, China
Research Scientist
11/2002-04/2003
* Investigation of Chemistry and Physics of Low-Dimensional Nanoscale Materials.
@ Created a new supe...
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